{"id":17,"date":"2023-07-28T18:27:16","date_gmt":"2023-07-28T18:27:16","guid":{"rendered":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/?page_id=17"},"modified":"2024-07-12T11:50:13","modified_gmt":"2024-07-12T11:50:13","slug":"publications","status":"publish","type":"page","link":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/publications\/","title":{"rendered":"Publications"},"content":{"rendered":"

Refereed Journal Articles\u00a0<\/strong><\/h4>\n

A. S. Senarath,\u00a0<\/span>S. Islam,\u00a0<\/span>A. Sengupta,\u00a0<\/span>M. W. McCurdy,\u00a0<\/span>T. Anderson,\u00a0<\/span>A. Jacobs,\u00a0<\/span>R. Kaplar,\u00a0<\/span>D. R. Ball,\u00a0<\/span>E. X. Zhang,\u00a0<\/span>S. T. Pantelides,\u00a0<\/span>R. A. Reed,\u00a0<\/span>M. A. Ebrish<\/strong>,\u00a0<\/span>D. M. Fleetwood,\u00a0<\/span>J. D. Caldwell,\u00a0<\/span>R. D. Schrimpf; Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design.\u00a0Applied Physics Letters\u00a02024; 124 (13)<\/p>\n

M. A. Ebrish<\/span><\/strong>,\u00a0M. A. Porter<\/span>,\u00a0A. G. Jacobs<\/span>,\u00a0J. C. Gallagher<\/span>,\u00a0R. J. Kaplar<\/span>,\u00a0B. P. Gunning<\/span>,\u00a0K. D. Hobart,<\/span>\u00a0T. J. Anderson. “S<\/span>tudy of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes,” Applied Physics Express 2023, 16 (11), 116501.<\/p>\n

M. A. Ebrish<\/strong>, M. Porter, A.D. Koehler, A. G. Jacobs, J.C. Gallagher, R. J. Kaplar, B. P. Gunning, K. D. Hobart, T. J. Anderson \u201cImpact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination,\u201d Crystals 2022, 12, 623.<\/p>\n

J. C. Gallagher, M. A. Ebrish<\/strong>, M. A. Porter, A. G. Jacobs, B. Gunning, R. Kaplar, K. D.Hobart, T. J. Anderson. “Optimizing Performance and Yield of Vertical GaN Diodes on Large Format Wafers Using Long-Range Optical Techniques,” Scientific Reports 12, no. 1 (2022): 1-8.<\/p>\n

P. Pandey, T. M. Nelson, W. M. Collings, M. R. Hontz, D. G. Georgiev, A. D. Koehler, T. J. Anderson, J. C. Gallagher, G. M. Foster, A. G. Jacobs, M. A. Ebrish<\/strong>, B. P. Gunning, R. J. Kaplar, K. D. Hobart, R. Khanna. “A Simple Edge Termination Design for Vertical GaN P-N Diodes” IEEE Transactions on Electron Devices, Volume: 69, Issue: 9, September 2022.<\/p>\n

S. Han, J. Song, M. Sadek, A. Molina, M. A. Ebrish<\/strong>, S. Mohney, T. J. Anderson, R. Chu. “12.5-kV GaN Super-Heterojunction Schottky Barrier Diodes,\u201d IEEE TED., Vol. 68, Issue: 11 (2021): 5736 \u2013 5741.<\/p>\n

M. A. Ebrish<\/strong>, T. J. Anderson, A. G. Jacobs, J. C. Gallagher, J. K. Hite, M. A. Mastro, B Feigelson, Y. Wang, M. Liao, M. Goorsky, K. D. Hobart, \u201cProcess Optimization for Selective Area Doping of GaN by Ion Implantation,\u201d J. Electron. Mater, vol. 50, no. 8, (2021).<\/p>\n

J. C. Gallagher, T. J. Anderson, A. D. Koehler, M. A. Ebrish<\/strong>, G. M. Foster, M. A. Mastro, J. K. Hite, B. P. Gunning, R. J. Kaplar, K. D. Hobart, and F. J. Kub, \u201cEffect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance,\u201d J. Electron. Mater, (2021).<\/p>\n

M. J. Tadjer, K. Sasaki, D. Wakimoto, T. J. Anderson, M. A. Mastro, J. C. Gallagher, A. G. Jacobs, A. L. Mock, A. D. Koehler, M. A. Ebrish<\/strong>, K. D. Hobart, and A. Kuramata, \u201cDelta-doped \u03b2-(Al x Ga 1\u2212x ) 2 O 3 \/Ga 2 O 3 heterostructure field-effect transistors by ozone molecular beam epitaxy ,\u201d J. Vac. Sci. Technol. A 39, (2021).<\/p>\n

J. K. Hite, M. A. Mastro, J. C. Gallagher, M. A. Ebrish<\/strong>, T. J. Anderson, J. A. Freitas. “Understanding the Interaction Between Substrate and Epitaxy in Homoepitaxial GaN Growth Using Raman Mapping and Photoluminescence Spectroscopy” ECS Transactions 98 (2020) : 63-67<\/p>\n

M. A. Ebrish<\/strong>, T. J. Anderson, A.D. Koehler, G.M. Foster, J.C. Gallagher, R. J. Kaplar, B. P. Gunning, K. D. Hobart, \u201cA study on the impact of mid-gap defects on vertical GaN diodes,\u201d IEEE Trans. Semicond. Manuf. 33, (2020).<\/p>\n

G. M. Foster, A.D. Koehler, M. A. Ebrish<\/strong>, J. C. Gallagher, T. J. Anderson, B. Noesges, L. Brillson, B. P. Gunning, K. D. Hobart, F. Kub, \u201cRecovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV\/O3 treatments,\u201d Appl. Phys. Lett. 117, (2020).<\/p>\n

V. Meyers, E. Rocco, T. J. Anderson, J. C. Gallagher, M. A. Ebrish<\/strong>, K. Jones, M. Derenge, M. Shevelev, V. Sklyar, K. Hogan, B. McEwen, F. Shahedipour-Sandvik, \u201cp-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing,\u201d J. Appl. Phys. 128, (2020).<\/p>\n

E.J. Olson, R. Ma, T. Sun, M. A. Ebrish<\/strong>, N. Haratipour, K. Min, N. R. Aluru, and S. J. Koester \u201cCapacitive Sensing of Intercalated Molecules Using Graphene,\u201d ACS Appl. Mater. Interfaces <\/em>7, (2015).<\/p>\n

M. A. Ebrish<\/strong>, E. J. Olson, and S. J. Koester \u201cEffect of Noncovalent Basal Plane Functionalization on the Quantum Capacitance in Graphene,\u201d ACS Appl. Mater. Interfaces<\/em> 6, (2014).<\/p>\n

D. A. Deen, E.J. Olson, M. A. Ebrish,<\/strong> and S. J. Koester \u201cGraphene- based quantum capacitance wireless vapor sensors,\u201d IEEE Sensors Journal, VOL<\/em>. 14, NO. 5, (2014).<\/p>\n

Y. Su, M. A. Ebrish<\/strong>, E.J. Olson, and S.J. Koester \u201cSnSe2 field-effect transistors with high drive current,\u201d Appl. Phys. Lett<\/em>. 103, (2013).<\/p>\n

M. A. Ebrish<\/strong>, H. Shao, and S. J. Koester, \u201cOperation of multi-finger graphene quantum capacitance varactor using planarized local bottom gate electrodes,\u201d Appl. Phys. Lett<\/em>. 100, (2012).<\/p>\n

Conference Presentations\u00a0<\/strong><\/h4>\n

H. E. Dishman<\/strong>, O. R. Meilander, M. A. Ebrish “Revolutionizing P-Type GaN: An Innovative Approach to Achieve High-Doping Efficiency and Low-Contact Resistance for GaN Devices,” presented at Eletronic Materials Conference 2024, June 2024, College Park, MD.<\/p>\n

O. R. Meilander,\u00a0<\/strong>H. E. Dishman, S. Neema, M. A. Ebrish “Linear Spectroscopy to Understand Doping and Plasma Damage in Commercially Available GaN,”\u00a0 presented at Eletronic Materials Conference 2024, June 2024, College Park, MD.<\/p>\n

M. A. Ebrish<\/strong>, A. G. Jacobs, M. Porter, P. Pandey, T. Nelson, R. Khanna, A. \u00a0Koehler2, J. Gallagher, R. J. Kaplar, B. Gunning, K. D. Hobart, and T. J. Anderson \u201cImpact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design,\u201d presented at Compound Semiconductor Week 2022, June 2022, Ann Arbor, MI.<\/p>\n

M. A. Ebrish<\/strong>, A. G. Jacobs, M. Porter, P. Pandey, T. Nelson, R. Khanna, A. \u00a0Koehler2, J. Gallagher, R. J. Kaplar, B. Gunning, K. D. Hobart, and T. J. Anderson \u201cImpact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design,\u201d presented at 241st<\/sup>ECS Meeting, May 2022, Vancouver, CA.<\/p>\n

M. A. Ebrish<\/strong>, T. J. Anderson, A. G. Jacobs, M. Porter, J. Gallagher, R. J. Kaplar, B. Gunning, K. D. Hobart, and F. Kub \u201cEdge Termination Design for Planar 1.2kV Vertical GaN PiN Diodes,\u201d presented at GOMACTech 2022, March 2022, Miami, FL.<\/p>\n

M. A. Ebrish<\/strong>, T. J. Anderson, A. G. Jacobs, M. Porter, J. Gallagher, R. J. Kaplar, B. Gunning, K. D. Hobart, and F. Kub \u201cUnderstanding the Electroluminescence Signature of High-Voltage Vertical GaN Pin Diodes with Different Edge Termination Designs,\u201d presented at 240th<\/sup> ECS Meeting, October 2021, virtual. (Invited)<\/p>\n

M. A. Ebrish<\/strong>, T. J. Anderson, M. Porter, A. G. Jacobs, J.C. Gallagher, R. J. Kaplar, B. P. Gunning, K. D. Hobart, \u201cInvestigation of Hybrid Edge Termination Designs for Vertical 1.2kV GaN PiN Diodes,\u201d presented at the 50th<\/sup> Lester Eastman Conference on High Performance Devices, South Bend,IN, August 2021.<\/p>\n

J. C. Gallagher, M. A. Ebrish<\/strong>, A. G. Jacobs, A. D. Koehler, G. P. Brenden, R. J. Kaplar, K. D. Hobart, T. J. Anderson, “Using Long Range Optical Techniques to Predict Vertical GaN Diode Performance” presented at the 50th<\/sup> Lester Eastman Conference on High Performance Devices, South Bend,IN, August 2021.<\/p>\n

M. A. Ebrish<\/strong>, T. J. Anderson, M. Porter, A. G. Jacobs, J.C. Gallagher, R. J. Kaplar, B. P. Gunning, K. D. Hobart, \u201cIon Implanted Edge Termination Designs for High Current 1.2kV GaN Vertical PiN Diodes,\u201d presented at the 63rd<\/sup> Electronic Materials Conference, June 2021, virtual.<\/p>\n

R. J. Kaplar, B. P. Gunning, A. A. Allerman, M. A. Crawford, J. D. Flicker, A. M. Armstrong, L. Yates, A. T. Binder, J. R. Dickerson, G. Pickrell, P. Sharps, T. J. Anderson, J. C. Gallagher, A. G. Jacobs, A. D. Koehler, M. J. Tadjer, K. D. Hobart, M. A. Ebrish<\/strong>, M. A. Porter, R. Martinez, K. Zheng, D. Ji, S. Chowdhury, O. Aktas, J. Cooper. “Development of High-Voltage Vertical GaN PN Diodes,” presented at 2020 IEEE International Electron Devices Meeting, December 2020, virtual. (Invited)<\/p>\n

M. A. Ebrish<\/strong>, T. J. Anderson, A. G. Jacobs, B. Feigelson, J. K. Hite, M. A. Mastro, Y. Wang, M. Goorsky, K. Hobart, \u201cProcess Optimization for Selective Area Doping of GaN by Ion Implantation,\u201d presented at the 62nd<\/sup> Electronic Materials Conference, Virtual, June 2020.<\/p>\n

G. M. Foster, A. D. Koehler, M. A. Ebrish<\/strong>, T. J. Anderson, B. Gunning, R. J. Kaplar, K. D. Hobart, F. J. Kub, “Recovery of Sidewall Etch Damage in p-type Gallium Nitride,” presented at the 62nd<\/sup> Electronic Materials Conference, June 2020, virtual.<\/p>\n

J. C. Gallagher, T. J. Anderson, A. D. Koehler, M. A. Ebrish<\/strong>, M. A. Mastro, J. K. Hite, B. Gunning, R. Kaplar, K. D. Hobart, F. J. Kub. “Predicting the Quality of Vertical GaN Devices Using Long-Range Optical Techniques,” presented at the 62nd<\/sup> Electronic Materials Conference, June 2020, virtual.<\/p>\n

M. A. Ebrish<\/strong>, T. J. Anderson, J. C. Gallagher, J. Spencer, J. K. Hite, M. A. Mastro, K. D. Hobart, F. J. Kub. “Exploring the Capability of Hyperspectral Electroluminescence for Process Monitoring in Vertical GaN Devices” Conference Digest (2020) at 2020 International Conference on Compound Semiconductor Manufacturing Technology, 11-14 May 2020 Tuscon, AZ.<\/p>\n

M. A. Ebrish,<\/strong> F. Torregrosa, B. Roux, M. J. P. Hopstaken, A. F. Petrescu, A. J. Varghese, L. Viviand, V. Pai, S. Skordas, H. Jagannathan, and O. Gluschenkov, \u201cPlasma doping conformality study in FinFET structures,\u201d Oral presentation at AVS, Tampa, FL, October 2017.<\/p>\n

M. A. Ebrish<\/strong> and S. J. Koester \u201cUnderstanding Graphene’s Interface with Different Dielectrics in Graphene Devices,\u201d Oral presentation at MRS, Phoenix, AZ, April 2017.<\/p>\n

M. A. Ebrish<\/strong> and S. J. Koester \u201cUnderstanding graphene interface with different dielectrics in a local back gated graphene field effect transistors,\u201d Oral presentation at 10th Albany Nanotechnology Symposium, Albany, NY, November 2016.<\/p>\n

M. A. Ebrish<\/strong> and S. J. Koester \u201cElectrical Characterization of all-CVD Graphene \/ Hexagonal Boron Nitride Interface: Comparison with HfO2<\/sub>,\u201d Oral presentation and Poster at TECHCON, Austin, TX, September 2014.<\/p>\n

M. A. Ebrish<\/strong> and S. J. Koester \u201cAll-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate,\u201d presented at the 72nd<\/sup> Device Research Conference (DRC), Santa Barbara, CA, June 2014.<\/p>\n

M. A. Ebrish<\/strong> and S. J. Koester \u201cElectrical Characterization of Dielectric\/Graphene Interfaces for Spintronic Applications,\u201d C-SPIN Annual Review (2013).<\/p>\n

M. A. Ebrish<\/strong>, E. J. Olson, and S. J. Koester, “Understanding the effect of glucose oxidase surface functionalization on the material and electronic properties of graphene,” presented at the 55th Electronic Materials Conference, Notre Dame, IN, June 2013.<\/p>\n

M. A. Ebrish<\/strong>, D. A. Deen, and S. J. Koester, “Border trap characterization in metal-oxide-graphene capacitors with HfO2<\/sub> dielectrics,”\u00a0presented\u00a0at the 71st Device Research Conference (DRC), Notre Dame, IN, June 2013.<\/p>\n

E.J. Olson, D. A. Deen, M. A. Ebrish<\/strong>, A. Basu, Y. C. Kudva, P. Mukherjee, and S. J. Koester, \u201cWireless graphene-based quantum capacitance sensors for continuous glucose monitoring,\u201d presented at TechConnect World, Washington, DC, May 2013.<\/p>\n

M. A. Ebrish<\/strong>, and S. J. Koester, “Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates,” presented\u00a0at the 70th Device Research Conference (DRC), State College, PA, June 2012.<\/p>\n

Issued US Patents<\/strong><\/h4>\n

T. J. Anderson,\u00a0M. A. Ebrish,<\/strong> A. G. Jacobs, K. D. Hobart, F. J. Kub, “Selective Area Diffusion Doping of III-N Materials,” US 20240120201A1 (2024).<\/p>\n

S. Zare, M. Rizzolo, M. A. Ebrish,<\/strong> T. E. Standaert, \u201cDielectric retention and method of forming memory pillar,\u201d US20210399212A1 (2021).<\/p>\n

L. A. Clevenger, L. H. Clevenger, M. A. Ebrish,<\/strong> G. Karve, F. Lie, E. A. De Silva, N. A. Saulnier, and I. P. Seshadri, \u201cStructure and method for equal substrate to channel height between N and P fin-FETs,\u201d US11043494B2 (2021).<\/p>\n

M. A. Ebrish<\/strong>, F. Lie, N. Loubet, G. Karve, I. Seshadri, L. A. Clevenger, and L. H. Clevenger, \u201cNanosheet transistor barrier for electrically isolating the substrate from the source or drain regions,\u201d US 10818751 (2020).<\/p>\n

M. A. Ebrish<\/strong>, X. Liu, B. Anderson, H. Bu, J. Wang, \u201cTwo step fin etch and reveal for VTFETs and high breakdown LDVTFETs,\u201d US 10811528 (2020).<\/p>\n

M. A. Ebrish, <\/strong>O. Gluschenkov, <\/strong>I. P. Seshadri, E. A. De Silva, \u201cHigh temperature ultra-fast annealed soft mask for semiconductor devices,\u201d US 10804106 (2020).<\/p>\n

M. A. Ebrish<\/strong>, F. Lie, N. Loubet, G. Karve, I. Seshadri, L. A. Clevenger, and L. H. Clevenger, \u201cNanosheet transistor barrier for electrically isolating the substrate from the source or drain regions,\u201d US 16290165 (2020).<\/p>\n

M. A. Ebrish<\/strong>, M. Rizzolo, S. Nguyen, R. R. Patlolla, and D. F. Canaperi, \u201cSemiconductor structures of more uniform thickness,\u201d US 16204336 (2020).<\/p>\n

F. Lie, M. A. Ebrish<\/strong>, E. A. De Silva, I. P. Seshadri, G. Karve, L. A. Clevenger, L. H. Clevenger, and N. Loubet, \u201cNanosheet substrate to source\/drain isolation,\u201d US 16102198 (2020).<\/p>\n

M. A. Ebrish, <\/strong>O. Gluschenkov, \u201cReducing series resistance between source and\/or drain regions and a channel region,\u201d US 10319855B2 (2019).<\/p>\n

L. A. Clevenger, L. H. Clevenger, M. A. Ebrish,<\/strong> G. Karve, F. Lie, E. A. De Silva, N. A. Saulnier, and I. P. Seshadri, \u201cStructure and method for equal substrate to channel height between N and P fin-FETs,\u201d US 10381348 (2019).<\/p>\n

G. Karve, F. Lie, I. P. Seshadri, M. A. Ebrish, <\/strong>L. H. Clevenger, E. A. De Silva, and, N. A. Saulnier, \u201cVertical transport FET with two or more gate lengths,\u201d US 10361127 (2017).<\/p>\n

I. C. Chu, L. A. Clevenger, L. H. Clevenger, M. A. Ebrish, <\/strong>G. Karve, F. Lie, D. Priyadarshini, N. A. Saulnier, and I. P. Seshadri, \u201cSeparate N and P fin etching for reduced CMOS device leakage,\u201d US 9711507 (2017).<\/p>\n

M. A. Ebrish, <\/strong>H. Jagannathan, S. Mochizuki, and A. Reznicek, \u201cContained punch through stopper for CMOS structures on a strain relaxed buffer substrate,\u201d US 9666486 (2017).<\/p>\n

M. A. Ebrish, <\/strong>O. Gluschenkov, S. Mochizuki, and A. Reznicek, \u201cHigh acceptor level doping in silicon germanium,\u201d US 9799736 (2017).<\/p>\n","protected":false},"excerpt":{"rendered":"

Refereed Journal Articles\u00a0 A. S. Senarath,\u00a0S. Islam,\u00a0A. Sengupta,\u00a0M. W. McCurdy,\u00a0T. Anderson,\u00a0A. Jacobs,\u00a0R. Kaplar,\u00a0D. R. Ball,\u00a0E. X. Zhang,\u00a0S. T. Pantelides,\u00a0R. A. Reed,\u00a0M. A. Ebrish,\u00a0D. M. Fleetwood,\u00a0J. D. Caldwell,\u00a0R. D. Schrimpf; Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design.\u00a0Applied Physics Letters\u00a02024; 124 (13) M. A. Ebrish,\u00a0M. A. Porter,\u00a0A. G. Jacobs,\u00a0J. C. Gallagher,\u00a0R….<\/p>\n","protected":false},"author":468,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"tags":[],"class_list":["post-17","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/wp-json\/wp\/v2\/pages\/17","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/wp-json\/wp\/v2\/users\/468"}],"replies":[{"embeddable":true,"href":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/wp-json\/wp\/v2\/comments?post=17"}],"version-history":[{"count":7,"href":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/wp-json\/wp\/v2\/pages\/17\/revisions"}],"predecessor-version":[{"id":253,"href":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/wp-json\/wp\/v2\/pages\/17\/revisions\/253"}],"wp:attachment":[{"href":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/wp-json\/wp\/v2\/media?parent=17"}],"wp:term":[{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/lab.dev.vanderbilt.edu\/eedg\/wp-json\/wp\/v2\/tags?post=17"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}